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Photoluminescence study of surface segregation of In in InGaAs-based structures grown by MBE and atomic layer MBEBOSACCHI, A; FRANCHI, S; PASCARELLA, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 469-473, issn 0921-5107Conference Paper

InAs/GaAs self-assembled quantum dots grown by ALMBE and MBEBOSACCHI, A; FRIGERI, P; FRANCHI, S et al.Journal of crystal growth. 1997, Vol 175-76, pp 771-776, issn 0022-0248, 2Conference Paper

Study of ALMBE growth conditions for the preparation of compositionally graded AlGaAs/GaAs structuresMADELLA, M; BOSACCHI, A; FRANCHI, S et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 270-273, issn 0022-0248Conference Paper

A 25-year laboratory experiment on French SON68 nuclear glass leached in a granitic environment - First investigationsGUITTONNEAU, C; GIN, S; GODON, N et al.Journal of nuclear materials. 2011, Vol 408, Num 1, pp 73-89, issn 0022-3115, 17 p.Article

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Fundus angiography with fluorescein-labelled peptide fraction from bovine factor VIII : correlation with histologic findingsCARDILLO PICCOLINO, F; GHIGLIONE, D; CEPPA, P et al.European journal of ophtalmology. 1992, Vol 2, Num 3, pp 135-143, issn 1120-6721Article

Effects of different processes with hydrogen on the photoluminescence of GaAlAs:Si grown by molecular beam epitaxyGRILLI, E; GUZZI, M; ZAMBONI, R et al.Applied physics letters. 1990, Vol 57, Num 26, pp 2797-2799, issn 0003-6951, 3 p.Article

Effect of hydrogen implantation on shallow and deep levels in GaAs growth by molecular-beam epitaxyBOSACCHI, A; FRANCHI, S; GOMBIA, E et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 5, pp 1103-1105, issn 0734-211X, 3 p.Article

Long-term follow-up of allergic conjunctivitis in children: The out-patients' department experience (allergic conjunctivitis in children: Management and care)NAPOLI, G; ALLEGRI, P; MUSSO, C et al.European annals of allergy and clinical immunology. 2005, Vol 37, Num 1, pp 20-24, issn 1764-1489, 5 p.Article

Vertically stacked quantum dots grown by ALMBE and MBEFRIGERI, P; BOSACCHI, A; FRANCHI, S et al.Journal of crystal growth. 1999, Vol 201202, pp 1136-1138, issn 0022-0248Conference Paper

Composition control of GaSbAs alloysBOSACCHI, A; FRANCHI, S; ALLEGRI, P et al.Journal of crystal growth. 1999, Vol 201202, pp 858-860, issn 0022-0248Conference Paper

A photoluminescence study of the effects of hydrogen on deep levels in MBE grown GaAlAs:SiBOSACCHI, A; FRANCHI, S; VANZETTI, L et al.Physica. B, Condensed matter. 1991, Vol 170, Num 1-4, pp 540-544, issn 0921-4526, 5 p.Conference Paper

Microwave behaviour in Z-type polycristalline hexaferritesALLEGRI, P; AUTISSIER, D; TAFFARY, T et al.Journal de physique. IV. 1998, Vol 8, Num 2, pp Pr2.397-Pr2.400, issn 1155-4339Conference Paper

Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxyBOSACCHI, A; FRANCHI, S; ALLEGRI, P et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 844-848, issn 0022-0248, 2Conference Paper

Indium surface segregation in InGaAs-based structures prepared by molecular beam epitaxy and atomic layer molecular beam epitaxyBOSACCHI, A; COLONNA, F; FRANCHI, S et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 185-189, issn 0022-0248, 1Conference Paper

Microwave behaviour in Z type polycristalline hexaferritesALLEGRI, P; AUTISSIER, D; TAFFARY, T et al.Key engineering materials. 1997, pp 1424-1427, issn 1013-9826, isbn 0-87849-761-7, 3VolConference Paper